THEORY OF HYDROGEN EVOLUTION IN AMORPHOUS HYDROGENATED SILICON: COMPARISON WITH EXPERIMENTSGERMAIN P; ZELLAMA K.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 4; PP. 347-364; BIBL. 21 REF.Article

CRYSTALLIZATION IN AMORPHOUS SILICONZELLAMA K; GERMAIN P; SQUELARD S et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6995-7000; BIBL. 12 REF.Article

CRYSTALLIZATION IN AMORPHOUS GERMANIUMGERMAIN P; ZELLAMA K; SQUELARD S et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6986-6994; BIBL. 29 REF.Article

GROWTH RATE OF CRYSTALLIZATION IN AMORPHOUS GERMANIUM PRODUCED BY ION IMPLANTATION: A RAMAN SPECTROSCOPY STUDYZELLAMA K; MORHANGE JF; GERMAIN P et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 2; PP. 717-723; ABS. FRE; BIBL. 13 REF.Article

CRYSTALLIZATION OF PHOSPHORUS-DOPED AMORPHOUS SILICON FILMS PREPARED BY GLOW DISCHARGE DECOMPOSITION OF SILANESQUELARD S; ZELLAMA K; GERMAIN P et al.1981; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1981; VOL. 16; NO 12; PP. 657-662; ABS. FRE; BIBL. 12 REF.Article

ON THE NATURE OF THE DISORDERED LAYER PRODUCED BY ION IMPLANTATIONZELLAMA K; GERMAIN P; SQUELARD S et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 12; PP. 901-905; BIBL. 10 REF.Article

POSSIBLE CONFIGURATIONAL MODEL FOR HYDROGEN IN AMORPHOUS SI:H. AN EXODIFFUSION STUDYZELLAMA K; GERMAIN P; SQUELARD S et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6648-6667; BIBL. 48 REF.Article

On the hydrogen incorporation, intrinsic stress and thermal stability of hydrogenated amorphous carbon films deposited from an electron cyclotron resonance plasmaBENLAHSEN, M; RACINE, B; ZELLAMA, K et al.Journal of non-crystalline solids. 2001, Vol 283, Num 1-3, pp 47-55, issn 0022-3093Article

Effect of the hydrogen dilution on the local microstructure in hydrogenated amorphous silicon films deposited by radiofrequency magnetron sputteringDAOUAHI, M; ZELLAMA, K; BOUCHRIHA, H et al.EPJ. Applied physics (Print). 2000, Vol 10, Num 3, pp 185-191, issn 1286-0042Article

Structure and crystal growth of atmospheric and low-pressure chemical-vapor-deposited silicon filmsBISARO, R; MAGARINO, J; PROUST, N et al.Journal of applied physics. 1986, Vol 59, Num 4, pp 1167-1178, issn 0021-8979Article

Effect of nitrogen on the optoelectronic properties of a highly sp²-rich amorphous carbon nitride filmsALIBART, F; LEJEUNE, M; ZELLAMA, K et al.Diamond and related materials. 2011, Vol 20, Num 3, pp 409-412, issn 0925-9635, 4 p.Article

Atomic rearrangement of sputtered amorphous carbon nitride thin films during growthDURAND-DROUHIN, O; BENLAHSEN, M; CLIN, M et al.Diamond and related materials. 2004, Vol 13, Num 10, pp 1854-1858, issn 0925-9635, 5 p.Article

Structure and optical properties of carbon nitride films deposited by magnetron sputteringLEJEUNE, M; DURAND-DROUHIN, O; ZELLAMA, K et al.Solid state communications. 2001, Vol 120, Num 9-10, pp 337-342, issn 0038-1098Article

Effect of annealing on the structural and electrical properties of d.c. multipolar plasma deposited a-C:H filmsCLIN, M; BENLAHSEN, M; ZEINERT, A et al.Thin solid films. 2000, Vol 372, Num 1-2, pp 60-69, issn 0040-6090Article

The effect of hydrogen evolution on the mechanical properties of hydrogenated amorphous carbonBENLAHSEN, M; BRANGER, V; HENOCQUE, J et al.Diamond and related materials. 1998, Vol 7, Num 6, pp 769-773, issn 0925-9635Conference Paper

Comparative study of the structure of a-CNx and a-CNx: H films using NEXAFS, XPS and FT-IR analysisBOUCHET-FABRE, B; ZELLAMA, K; GODET, C et al.Thin solid films. 2005, Vol 482, Num 1-2, pp 156-166, issn 0040-6090, 11 p.Conference Paper

Electronic properties of amorphous carbon nitride a-C_1-xN_x:H films investigated using vibrational and ESR characterisationsLACERDA, M; LEJEUNE, M; JONES, B. J et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 907-911, issn 0022-3093, bConference Paper

Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperatureCHERFI, R; FARHI, G; AOUCHER, M et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 192-195, issn 0040-6090Conference Paper

Network connectivity and structural defects in a-C:H filmsBOUNOUH, Y; CHAHED, L; SADKI, A et al.Diamond and related materials. 1995, Vol 4, Num 4, pp 492-498, issn 0925-9635Conference Paper

Influence de l'état de la surface sur les propriétés optiques de couches minces de silicium amorphe hydrogéné déposées par «glow discharge»DECHELLE, F; BERGER, J. M; ANCE, C et al.Thin solid films. 1983, Vol 103, Num 3, pp 243-248, issn 0040-6090Article

Effect of the defects on the optical and electronic properties of plasma polymerized organic thin filmsMANAA, C; LEJEUNE, M; VON BARDELEBEN, H. J et al.Solid state communications. 2014, Vol 188, pp 36-39, issn 0038-1098, 4 p.Article

Influence on the sp³/sp² character of the carbon on the insertion of nitrogen in RFMS carbon nitride filmsBOUCHET-FABRE, B; LAZAR, G; BALLUTAUD, D et al.Diamond and related materials. 2008, Vol 17, Num 4-5, pp 700-704, issn 0925-9635, 5 p.Conference Paper

Effect of the RF power and deposition temperature on the electrical and vibrational properties of carbon nitride filmsLAZAR, G; CLIN, M; CHARVET, S et al.Diamond and related materials. 2003, Vol 12, Num 2, pp 201-207, issn 0925-9635, 7 p.Conference Paper

Correlation between the gap states density and the modes of hydrogen incorporation in a-Si:H as a function of deposition conditions and thermal annealingCHAHED, L; ZELLAMA, K; SLADEK, P et al.Annales de chimie (Paris. 1914). 1994, Vol 19, Num 7-8, pp 453-458, issn 0151-9107Conference Paper

Experimental studies of the light-induced effects in undoped hydrogenated amorphous silicon as a function of deposition conditionsZELLAMA, K; LABIDI, H; ROCA, P et al.Thin solid films. 1991, Vol 204, Num 2, pp 385-395, issn 0040-6090Article